NTE308
Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Commutating Switch

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Repetitive Peak Forward Off-State and Reverse Voltage, VDRM, VRRM...................800V
RMS On-State Current, ITRMSM, IFRMSM...............................................8A
Mean On-State Current (TC = +80°C), ITAVM, IFAVM
Thyristor...................................................................3.4A
Diode.....................................................................3.45A
Repetitive Peak On-State Current, ITRM, IFRM.......................................... 50A
Surge Current (t = 10ms, tvi = +100°C), ITSM, IFSM
Thyristor.................................................................... 80A
Diode.......................................................................60A
Non-Repetitive Rate of Rise of On-State Current, di/dtcrit...........................500A/μs
Repetitive Rate of Rise of On-State Current (ITM = 20A, tvi = +100°C, VDM = 640V), di/dtcrit
(Pulse Generator Data: vL = 8V, iK = 0.25A, diG/dt ≥ 0.25A/μs)
fo = 50Hz................................................................ 300A/μs
fo = 16kHz...............................................................100A/μs
Rate of Rise of Off-State Voltage (tvi = +100°C, VD = 536V), dv/dtcrit.................. 400V/μs
Rate of Rise of Voltage Subsequent to Prior On-State Current, dv/dtcrit
tvi = +100°C, VD = 536V.................................................. 1000V/μs
Peak Gate Power Losses (tg ≤ 10μs), PGM...........................................10W
Total Mean Gate Power Loss for One Cycle, PG........................................ 2W
Operating Temperature Range, Topr........................................ -40° to +100°C
Storage Temperature Range, Tstg.......................................... -40° to +130°C
Thermal Resistance, Junction-to-Case, RthJC.....................................2.3°C/W
Thermal Resistance, Junction-to-Ambient, RthJA
Without Heatsink.........................................................35°C/W
On Vertical Cooling Fin 60mm x 60mm x 1.5mm, Al or Cu, Roughened Surface.. 10°C/W

Electrical Characteristics:
Maximum On-State Voltage (tvi = +25°C, iT = iF = 10A), VT, VF
Thyristor.................................................................. 2.16V
Diode...................................................................... 2.2V
Threshold Voltage, V(TO)
Thyristor...................................................................1.6V
Diode...................................................................... 1.4V
Forward Slope Resistance, rT, rF
Thyristor.................................................................... 53Ω
Diode.......................................................................70Ω
Maximum Gate Trigger Voltage (tvi = +25°C, VD = 6V, RA = 20Ω), VGT...................2.0V
Minimum Gate Trigger Voltage (tvi = +100°C, VD = 6V, RA = 20Ω), VGT...................0.1V
Maximum Gate Trigger Current (tvi = +25°C, VD = 6V, RA = 20Ω), IGT...................50mA
Maximum Holding Current (tvi = +25°C, VD = 6V, RA = 20Ω), IH........................ 100mA
Maximum Latching Current (tvi = +25°C, VD = 6V, RGK ≥ 20Ω), IL...................... 210mA
(Pulse Generator Data: iG = 0.25A, diG/dt = 0.25A/μs, tg = 4μs)
Typical Capacitance, Anode-Cathode at Zero Voltage (tvi = +25°C, fo = 16kHz), Czero.....250pF
Maximum Lag Charge (tvi = +100°C, iFM = 10A, -diF/dt = 10A/μs), QS.................0.96μAs
Maximum Forward Off-State and Reverse Current (tvi = +100°C, vD = 800V), iD, iR.......1.5mA
Maximum Gate Controlled Delay Time (tvi = +25°C, VD = 536V, iTM = 5A), tgd............ 0.8μs
(Pulse Generator Data: iG = 0.25A, diG/dt = 0.5A/μs)
Maximum Pulse Turn-Off Time (tvi = +100°C), tqp.................................... 5.1μs
Typical Pulse Turn-Off Time (tvi = +80°C, fo = 16kHz), tqp.............................3.8μs
Maximum Reverse Recovery Time (tvi = +25°C, iFM = 10A, -diF/dt = 10A/μs), trr.......... 0.7μs


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