NTE2716
Integrated Circuit NMOS, 16K UV Erasable PROM

Description:
The NTE2716 is a 16,384-bit (2048 x 8-bit) Erasable and Electrically Reprogrammable PROM in a 24-Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows the memory content to be erased with ultraviolet light. The NTE2716 operates from a single power supply and has a static power down mode.

Features:
- Single 5V Power Supply
- Automatic Power-Down Mode (Standby)
- Organized as 2048 Bytes of 8Bits
- TTL Compatible During Read and Program
- Access Time: 350ns
- Output Enable Active Level is User Selectable

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (Note 1)
All Input or Output Voltages (with respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6 to -0.3V
VPP Supply Voltage (with respect to VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +28 to -0.3V
Temperature Under Bias (VPP = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -10° to +80°C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range. Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +125°C

Note 1. Permanent device may occur if “Absolute Maximum Ratings” are exceeded. Functional operation should be restricted to “Recommended Operating Conditions”. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Note 2. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.

Programming Instructions:
Before programming, the memory should be submitted to a full ERASE operation to ensure every bit in the device is in the “1” state (represented by Output High). Data are entered by programming zeros (Output Low) into the required bits. The words are addressed the same way as in the READ operation. A programmed “0” can only be changed to a “1” by ultraviolet light erasure.
To set the memory up for Program Mode, the VPP input (Pin21) should be raised to +25V. The VCC supply voltage is the same as for the Read operation and G is at VIH. Programming data is entered in 8-bit words through the data out (DQ) terminals. Only “0 s” will be programmed when “0 s” and “1 s” are entered in the 8-bit data word.
After address and data setup, a program pulse (VIL to VIH) is applied to the E/Progr input. A program pulse is applied to each address location to be programmed. To minimize programming time, a 2ms pulse width is recommended. The maximum program pulse width is 55ms; therefore, programming must not be attempted with a DC signal applied to the E/Progr input.
Multiple NTE2716s may be programmed in parallel by connecting together like inputs and applying the program pulse to the E/Progr inputs. Different data may be programmed into multiple NTE2716s connected in parallel by using the PROGRAM INHIBIT mode. Except for the E/Progr pin, all like inputs (including Output Enable) may be common.
The PROGRAM VERIFY mode with VPP at +25V is used to determine that all programmed bits were correctly programmed.

Read Operation:
After access time, data is valid at the outputs in the READ mode. With stable system addresses, effectively faster access time can be obtained by gating the data onto the bus with Output Enable.
The Standby mode is available to reduce active power dissipation. The outputs are in the high impedance state when the E/Progr input pin is high (VIH) independent of the Output Enable input.

Erasing Instructions:
The NTE2716 can be erased by exposure to high intensity shortwave ultraviolet light, with a wavelength of 2537 angstroms. The recommended integrated dose (i.e. UV-intensity X exposure time) is 15Ws/cm2. As an example, using the “Model 30-000” UV-Eraser (Turner Designs, Mountain View, CA 94043) the ERASE-time is 36 minutes. The lamps should be used without shortwave filters and the NTE2716 should be positioned about one inch away from the UV-tubes.

Recommended Operating Procedures:
After erasure and reprogramming of the EPROM, it is recommended that the quartz window be covered with an opaque self-adhesive cover. It is important that the self-adhesive cover not leave any residue on the quartz if it is removed to allow another erasure.


Unser Halbleiter Katalog (ohne NTE-Sortiment)
NTE Sortiment (unser ganzes Sortiment)
Einzel-Halbleiter (ganzes Sortiment)

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Anmerkung zu den NTE/ECG Austauschhalbleiter:
NTE-Austauschhalbleiter (früher ECG Philips und Sylvania) sind sorgfältig ausgesuchte und erprobte Halbleiter, die einen sicheren Ersatz für Originaltypen verschiedenster Hersteller und Ursprünge für fast alle Applikationsbereiche im Wartungsdienst bieten.
Alle NTE-Austausch-Halbleiter sind einzeln in durchsichtigen Plastikbeuteln verpackt, auf welchen die wichtigsten Daten vermerkt sind.