NTE2387
MOSFET N-Channel Enhancement Mode, High Speed Switch

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Drain-Source Voltage, VDS.........................................................800V
Drain-Gate Voltage (RGS = 20kΩ), VDGR.............................................800V
Gate-Source Voltage, VGS.........................................................±30V
Pulsed Drain Current, IDM...........................................................16A
Continuous Drain Current, ID
TC = +25°C.................................................................4.0A
TC = +100°C................................................................ 2.5A
Total Dissipation (TC = +25°C), Ptot.................................................125W
Operating Junction Temperature, TJ...............................................+150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C
Maximum Thermal Resistance, Junction-to-Case, RthJC............................ 1.0°C/W
Typical Thermal Resistance, Junction-to-Ambient, RthJA............................ 60°C/W


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Semiconductors (our whole assortment)

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