NTE2350 (PNP)
Silicon Darlington Transistors High Current, General Purpose

See also >>> NTE2349 (NPN)

Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Features:
- High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A
- Diode Protection to Rated IC
- Monolithic Construction w/Built-In Base-Emitter Shunt Resistor
- Junction Temperature to +200°C

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO.....................................................120V
Collector-Base Voltage, VCB.......................................................120V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC
Continuous.................................................................. 50A
Peak...................................................................... 100A
Continuous Base Current, IB.......................................................... 2A
Total Power Dissipation (TC = +25°C), PD...........................................300W
Derate Above 25°C @ TC = +100°C.......................................1.71W/°C
Operating Junction Temperature Range, TJ.................................. -55° to +200°C
Storage Temperature Range, Tstg.......................................... -55° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.....................................0.584°C
Lead Temperature (During Soldering, 10sec Max), TL................................ +275°C


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