NTE274 (NPN)
Silicon Complementary Transistors Darlington Power Amplifier, Switch

See also >>> NTE275 (PNP)

Description:
The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low-frequency switching and hammer driver applications.

Features:
- High DC Current Gain: hFE = 3000 Typ @ IC = 2A
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 80V Min
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 80V
Collector-Base Voltage, VCB.........................................................80V
Emitter-Base Voltage, VEB...........................................................5V
Collector Current, IC
Continuous...................................................................4A
Peak........................................................................ 8A
Base Current, IB.................................................................80mA
Total Power Dissipation (TC = +25°C), PD............................................ 50W
Derate Above 25°C.....................................................0.286W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC.....................................3.5°C/W


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