NTE272 (NPN)
Silicon Darlington Complementary Power Amplifiers

See also >>> NTE273 (PNP)

Description:
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Features:
- High DC Current Gain:
hFE = 25,000 (Min) @ IC = 200mA
= 15,000 (Min) @ IC = 500mA
- Collector−Emitter Breakdown Voltage: V(BR)CES = 40V @ IC = 500mA
- Low Collector−Emitter Saturation Voltage: VCE(sat) = 1.5V @ IC = 1A
- Monolithic Construction for High Reliability

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector−Emitter Voltage (Note 2), VCEO.............................................. 40V
Collector−Emitter Voltage, VCES...................................................... 40V
Collector−Base Voltage, VCB........................................................ 50V
Emitter−Base Voltage, VEB.......................................................... 12V
Collector Current, IC.................................................................2A
Total Power Dissipation (TA = +25°C), PD.............................................. 1W
Derate above 25°C.......................................................8mW/°C
Total Power Dissipation (TC = +25°C), PD............................................ 10W
Derate above 25°C...................................................... 80mW/°C
Operating Junction Temperature Range, TJ...................................−55 to +150°C
Storage Temperature Range, Tstg...........................................−55 to +150°C
Thermal Resistance, Junction−to−Ambient, RthJA.................................. 125°C/W
Thermal Resistance, Junction−to−Case, RthJC.................................... 12.5°C/W

Note 1. NTE273 is a discontinued device and no longer available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor elements are identical. V(BR)CES is tested in lieu of V(BR)CEO in order to avoid errors caused by noise pickup. The voltage measured during the V(BR)CES test is the V(BR)CEO of the output transistor.
Note 3. Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.

Uniwatt darlington transistors can be used in any number of low power applications, such as relay drivers, motor control and as general purpose amplifiers. As an audio amplifier these devices, when used as a complementary pair, can drive 3.5 watts into a 3.2ohm speaker using a 14 volt supply with less than one per cent distortion. Because of the high gain the base drive requirement is as low as 1mA in this application. They are also useful as power drivers for high current application such as voltage regulators.
Note 1. NTE273 is a discontinued device and no longer available. Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor elements are identical. V(BR)CES is tested in lieu of V(BR)CEO in order to avoid errors caused by noise pickup. The voltage measured during the V(BR)CES test is the V(BR)CEO of the output transistor.


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