NTE29 (NPN)
Silicon Complementary Transistors High Power, High Current Switch

See also >>> NTE30 (PNP)

Description:
The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.

Features:
- High Current Capability: IC = 50A (Continuous)
- DC Current Gain: hFE= 15 to 60 @ IC = 25A
- Low Collector-Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO...................................................... 80V
Collector-Base Voltage, VCB.........................................................80V
Emitter-Base Voltage, VEB...........................................................5V
Continuous Collector Current, IC.....................................................50A
Base Current, IB...................................................................15A
Total Device Dissipation (TC = +25°C), PD...........................................300W
Derate Above 25°C.....................................................1.715W/°C
Operating Junction Temperature Range, TJ.................................. -65° to +200°C
Storage Temperature Range, Tstg.......................................... -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC...................................0.584°C/W


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