NTE2426 (NPN)
Silicon Complementary Transistors Darlington Switch

See also >>> NTE2427 (PNP)

Description:
The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT-89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay, and lamp drivers.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector-Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter-Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature (Note 2), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C
Thermal Resistance, Junction-to-Ambient (Note 1, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction-to-Tab (Note 2), RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W

Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Note 2. Based on maximum average junction temperature in line with common industrial practice. The resulting higher junction teperature of the output transistor part is taken into account.


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