NTE2409 NTE-2409 | ECG2409 ECG-2409 | NTE Electronics
NTE2409
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2408)
Description:
The NTE2409 is a silicon PNP general purpose transistor in a SOT-23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin-film hybrid circuits.
Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector-Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Emitter Current, IEM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TA = +60°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +150°C
Thermal Resistance, Junction-to-Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab-to-Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W
Thermal Resistance, Soldering Points-to-Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 90K/W
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Note 2. VBE decreases by about 2mV/K with increasing temperature.
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.
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Semiconductors (our whole assortment)
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