NTE2339
Silicon NPN Transistor High Voltage, High Speed Switch

Features:
- High Breakdown Voltage, High Reliability
- Fast Switching Speed
- Wide Safe Operating Area

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO.....................................................1100V
Collector-Emitter Voltage, VCEO.....................................................800V
Emitter-Base Voltage, VEBO.......................................................... 7V
Collector Current, IC
Continuous...................................................................3A
Peak (Note 1)................................................................ 10A
Collector Dissipation (TC = +25°C), PC...............................................30W
Operating Junction Temperature, TJ...............................................+150°C
Storage Temperature Range, Tstg.......................................... -55° to +150°C

Note 1. Pulse Width ≤ 300μs, Duty Cycle ≤ 10%.


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