NTE2310
Silicon NPN Transistor High Voltage, High Speed Switch

Description:
The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Collector-Emitter Voltage (VBE = 0), VCES...........................................1000V
Collector-Emitter Voltage (IB = 0), VCEO.............................................. 450V
Collector Current, IC
Continuous...................................................................8A
Peak (tp ≤ 2ms).............................................................. 20A
Base Current, IB
Continuous...................................................................4A
Peak (tp ≤ 2ms)...............................................................6A
Power Dissipation (TC = +25°C), PD................................................ 125W
Operating Junction Temperature, TJ...............................................+175°C
Storage Temperature Range, Tstg.......................................... -65° to +175°C
Thermal Resistance, Junction-to-Case, RthJC.....................................1.2°C/W


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.


Are you searching for replacements of semiconductors? The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.

QUICKCross Search Engine for NTE Replacement Semiconductors

Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.