NTE222
Field Effect Transistor Dual Gate N-Channel MOSFET

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Drain-Source Voltage, VDS.......................................................... 25V
Drain-Gate Voltage, VDG............................................................ 30V
Drain Current, ID.................................................................50mA
Reverse Gate Current, IG.........................................................-10mA
Forward Gate Current, IGF.........................................................10mA
Total Device Dissipation (TA = +25°C), PD.........................................360mW
Derate Above 25°C.....................................................2.4mW/°C
Total Device Dissipation (TC = +25°C), PD.......................................... 1.2mW
Derate Above 25°C.....................................................0.8mW/°C
Operating Junction Temperature Range, TJ.................................. -65° to +175°C
Storage Temperature Range, Tstg.......................................... -65° to +175°C
Lead Temperature (During Soldering), TL...........................................+300°C


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Semiconductors (our whole assortment)

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