NTE112
Silicon Small Signal Schottky Diode

Description:
The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications.

Info as pdf-file
NTE/ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward Continuous Current (TA = +25°C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Surge Non-Repetitive Forward Current (tp ≤ 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°
Thermal Resistance, Junction-to-Ambient (Note 1), Rth (j-a) . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W
Maximum Lead Temperature (During soldering, 4mm from case, 10s max), TL . . . . . . . . . . +230°C

Note 1. On infinite heatsink with 4mm lead length.


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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
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