NPN Silicon Transistor TO-236 Type BSW84 -> 2N2221A TO-18
Type Designator: BSW84
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5W
Maximum Collector-Base Voltage |Vcb|: 75V
Maximum Collector-Emitter Voltage |Vce|: 45V
Maximum Emitter-Base Voltage |Veb|: 5V
Maximum Collector Current |Ic max|: 0.5A
Collector Capacitance (Cc): 8pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO236
equivalent to 2N2221A
Type: BSW84
Pictures are a guide only actual product may vary. Subject to alterations and errors. Help us to eliminate errors:
Please report any errors here.
Are you searching for replacements of semiconductors?
The following link brings you to the search window of NTE Electronics (a world wide supplier of high quality electronic components). This QUICKCross software can assist users in selecting the proper NTE replacement device.
QUICKCross Search Engine for NTE Replacement Semiconductors
Our Assortment of NTE- Replacement Devices
Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.
Sprachen integrierter Schaltkreis integrated circuit, kurz IC, Mikrochip Microchip integreret kredsløb integreret kredslob circuito integrado (CI) circuit intégré (CI) circuit integre (CI) circuito integrato geïntegreerde schakeling geintegreerde schakeling Tümdevre Tuemdevre