NTE92 Silicon NPN-Transistor HiFi Power Amplifier Audio Output
Info as pdf-file
See also >>> NTE93 (PNP)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO |
|
200V |
Collector-Emitter Voltage, VCEO |
|
200V |
Emitter-Base Voltage, VEBO |
|
6V |
Continuous Collector Current, IC |
|
15A |
Continuous Base Current, IB |
|
5A |
Collector Power Dissipation (TC = +25°C), PC |
|
150W |
Maximum Operating Junction Temperature, TJmax |
|
+150°C |
Storage Temperature Range, Tstg |
|
-55° to +150°C |
Note 1. | Matched complementary pairs are available upon request (NTE93MCP). Matched complementary pairs have their gain specifications (hFE) matched to within 10% of each other. |
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
Collector-Emitter Breakdown Voltage |
V(BR)CEO |
IC = 50mA |
200 |
- |
- |
V |
Collector Cutoff Current |
ICBO |
VCB = 200V |
- |
- |
0.1 |
mA |
Emitter Cutoff Current |
IEBO |
VEB = 6V |
- |
- |
0.1 |
mA |
DC Current Gain |
hFE |
IC = 5A, VCE = 4V |
30 |
120 |
- |
|
Collector-Emitter Saturation Voltage |
VCE(sat) |
IC = 10A, IB = 1A |
- |
- |
3.0 |
V |
Transition Frequency |
fT |
VCE = 12V, IE = 0.5A |
- |
20 |
- |
MHz |
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