NTE75 Si NPN Transistor 5A 80V Amplifier Switch TO-111 (Stud Mount)
Info as pdf-file
Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.
Features:
- Fast Switching: tr, tf = 300ns (Max)
- Low Saturation Voltage: 250mV max @ 1A
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.33°C/W
Electrical Characteristics: (T
A = +25°C unless otherwise specified)
Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Unit |
Collector-Base Breakdown Voltage |
V(BR)CBO |
IC = 10µA |
110 |
- |
- |
V |
Collector-Emitter Breakdown Voltage |
V(BR)CEO |
IC = 100mA, Note 1 |
80 |
- |
- |
V |
Emitter-Base Breakdown Voltage |
V(BR)EBO |
IE = 10µA |
8 |
- |
- |
V |
Collector-Emitter Cutoff Current |
ICEO |
VCE = 60V |
- |
- |
100 |
µA |
ICEX |
VCE = 110V, VEB = 500mV |
- |
- |
10 |
µA |
Collector-Base Cutoff Current |
ICBO |
VCB = 80V |
- |
- |
0.4 |
µA |
Emitter-Base Cutoff Current |
IEBO |
VEB = 6V |
- |
- |
0.4 |
µA |
DC Current Gain (Note 1) |
hFE |
VCE = 5V, IC = 50mA |
40 |
- |
- |
|
VCE = 5V, IC = 1A |
40 |
- |
120 |
|
VCE = 5V, IC = 1A, TA = -65°C |
15 |
- |
- |
|
VCE = 5V, IC = 5A |
15 |
- |
- |
|
Collector Saturation Voltage |
VCE(sat) |
IC = 1A, IB = 100mA, Note 1 |
- |
- |
0.25 |
V |
IC = 5A, IB = 500mA, Note 1 |
- |
- |
1.5 |
V |
Base Saturation Voltage |
VBE(sat) |
IC = 1A, IB = 100mA, Note 1 |
- |
- |
1.2 |
V |
Base ON Voltage |
VBE(on) |
VCE = 2V, IC = 1A, Note 1 |
- |
- |
1.2 |
V |
AC Current gain |
hFE |
VCE = 5V, IC = 50mA, f = 1kHz |
40 |
- |
20 |
|
Current Gain-Bandwidth Product |
fT |
VCE = 10V, IC = 1A, f = 10MHz |
20 |
- |
120 |
MHz |
Output Capacitance |
Cob |
VCE = 10V, IE = 0, f = 1MHz |
- |
- |
150 |
pF |
Delay Time |
td |
VCC = 20V, IC = 1A, IB1 = -IB2 = 100mA, Pulse Width = 2µs, Duty Cycle </= 2%, Source Impedance = 50 Ohm |
- |
- |
60 |
ns |
Rise Time |
tr |
- |
- |
300 |
ns |
Storage Time |
ts |
- |
- |
1.7 |
µs |
Fall Time |
tf |
- |
- |
300 |
ns |
Note 1. Pulse Width = 300µs, Duty Cycle </= 2%.
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