NTE555
Silicon Pin Diode UHF/VHF Detector

Description:
The NTE555 is designed primarily for high-efficiency UHF and VHF detector applications. It is readily adaptable to may other fast switching RF and digital applications.

Features:
- Schottky Barrier Construction Provides Stable Characteristics by Eliminating the “Cat-Whisker” or “S-Bend” Contact
- Very Low Capacitance: 1.0pF
- Extremely Low Minority Carrier Lifetime: 100ps (Max)
- High Reverse Voltage: VR = 50V
- Low Reverse Leakage Current: IR = 200nA (Max)

Info as pdf-file
NTE-ECG replacement list as pdf-file
Diagrams and Info of most NTE-ECG Components

Absolute Maximum Ratings: (TJ = +125°C, unless otherwise indicated)
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Forward Power Dissipation (TA = 25°C), PF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65° to +150°C


NTE Electronic Components (our whole assortment)
Semiconductors (our whole assortment)

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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.