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NTE314 Silicon Controlled Rectifier (SCR) TO-3

Bestell-Nr.:    NTE314


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NTE314 NTE-314 | ECG314 ECG-314 | NTE Electronics NTE314
Silicon Controlled Rectifier (SCR) Power Regulator Switch

Description:
The NTE314 is a silicon controlled rectifier (SCR) in a TO3 type package designed for 12.5 Ampere RMS, 400 Volt power supply and computer control applications to +100°C maximum junction.

Features:
- Low Forward “ON” Voltage
- All Diffused Junctions for Greater Parameter Uniformity
- Glass Passivated for Greater Stability

Info as pdf-file
NTE-ECG replacement list as pdf-file
NTE-ECG diagrams

Absolute Maximum Ratings:
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM, VRRM . . . . . . . . . . . . 400V
RMS Forward Current (TC = +80°C, All Conduction Angles), IT(RMS) . . . . . . . . . . . . . . . . . . . . 12.5A
Peak Forward Surge Current (1/2 Cycle Sine Wave, 60Hz, TJ = -40° to +100°C), ITSM . . . . . 200A
Fusing Current (TJ = -40° to +100°C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170A2s
Forward Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Forward Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Forward Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Forward Gate Voltage, VGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19V
Peak Reverse Gate Voltage, VGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° to +125°C
Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7°C/W

Note 1. VDRM and VRRM can be applied on a continuous DC basis without incurrent damage. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage.


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Note about NTE replacement devices (formerly ECG Philips and Sylvania):
NTE has one of the most extensive semiconductor lines in the industry. All NTE semiconductors are guaranteed to meet or exceed original specifications.
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