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NTE97 NPN Transistor HV Darlington 10A 400V Power Amp TO-3

Bestell-Nr.:    NTE97


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NTE97 NPN Transistor HV Darlington 10A 400V Power Amp TO-3

Info as pdf-file

Silicon NPN Transistor High Voltage Darlington Power Amp, Switch
TO-3


Description:

The NTE97 is a silicon Darlington NPN transistor in a TO3 type package designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line-operated switch-mode applications.

Applications:

  • Switching Regulators
  • Inverters
  • Solenoid and Relay Drivers
Absolute Maximum Ratings:
Collector-Emitter Voltage, VCEO(sus) 400V
Collector-Emitter Voltage, VCEX(sus) 450V
Collector-Emitter Voltage, VCEV 500V
Emitter-Base Voltage, VEB 8V
Collector Current, IC
            Continuous
            Peak (Note 1)
10A
20A
Base Current, IB
            Continuous
            Peak (Note 1)
2.5A
5.0A
Total Device Dissipation (TC = +25°C), PD 150W
            Derate above 25°C 0.86W/°C
Total Device Dissipation (TC = +100°C), PD 100W
Operating Junction Temperature Range, TJ -65° to +200°C
Storage Temperature Range, Tstg -65° to +200°C
Thermal Resistance, Junction-to-Case, RthJC 1.17°C/W
Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle </= 10%.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector-Emitter Sustaining Voltage VCEX(sus) IC = 250mA, IB = 0, Vclamp = 400V 400 - - V
IC = 1A, Vclamp = 450V, TC = +100°C 450 - - V
IC = 5A, Vclamp = 450V, TC = +100°C 325 - - V
Collector Cutoff Current ICEV VCEV = 500V, VBE(off) = 1.5V - - 0.25 mA
VCEV = 500V, VBE(off) = 1.5V, TC = +150°C - - 0.5 mA
ICER VCE = 500V, RBE = 50 Ohm, TC = +100°C - - 0.5 mA
Emitter Cutoff Current IEBO VEB = 8V, IC = 0 - - 175 mA
ON Characteristics (Note 2)
DC Current Gain hFE IC = 2.5A, VCE = 5V 40 - 500  
IC = 5A, VCE = 5V 30 - 300  
Collector-Emitter Saturation Voltage VCE(sat) IC = 5A, IB = 250mA - - 1.9 V
IC = 5A, IB = 250mA, TC = +100°C - - 2.0 V
IC = 10A, IB = 1A - - 2.9 V
Base-Emitter Saturation Voltage VBE(sat) IC = 5.2A, IB = 250mA - - 2.5 V
IC = 5A, IB = 250mA, TC = +100°C - - 2.5 V
Diode Forward Voltage Vf IF = 5A, Note 3 - 3 5 V
Dynamic Characteristics
Small-Signal Current Gain hFE VCE = 10V, IC = 1A, f = 1MHz 10 - -  
Output Capacitance Cob VCB = 50V, IE = 0, f = 100kHz 60 - 275 pF
Switching Characteristics (Resistive Load)
Delay Time td VCC = 250V, IC = 5A, IB1 = 250mA,
VBE(off) = 5V, tp = 50µs, Duty Cycle </= 2%
- 0.05 0.2 µs
Rise Time tr - 0.25 0.6 µs
Storage Time ts - 0.5 1.5 µs
Fall Time tf - 0.06 0.5 µs
Switching Characteristics (Inductive Load, Clamped)
Storage Time tsv IC = 5A(pk), Vclamp = 450V, IB1 = 250mA,
VBE(off) = 5V, TC = +100°C
- 0.8 2.0 µs
Crossover Time tc - 0.6 1.5 µs
Storage Time tsv IC = 5A(pk), Vclamp = 450V, IB1 = 250mA,
VBE(off) = 5V, TC = +25°C
- 0.5 - µs
Crossover Time tc - 0.3 - µs
Note 2.Pulse Test: Pulse Width = 300µs, Duty Cycle </= 2%.
Note 3.The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.



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