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NTE906 Dual High-Frequency Differential Amplifier TO-5 (12-Pin)

Bestell-Nr.:    NTE906


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NTE906 Dual High-Frequency Differential Amplifier TO-5 (12-Pin)

Info als pdf File

Description:

The NTE906 is an integrated circuit in a 12-Lead TO5 type package consisting of two independent differential amplifiers with associated constant-current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general-purpose devices which exhibit low 1/f noise and a gain-bandwidth product in excess of 1GHz. These features make the NTE906 useful from DC to 500MHz. Bias and load resistors have been omitted to provide maximum application flexibility.

The monolithic construction of the NTE906 provides close electrical and thermal matching of the amplifiers. This feature makes this device particularly useful in dual-channel applications where matched performance of the two channels is required.

Features:

  • Power Gain:  23dB (Typ) @ 200MHz
  • Noise Figure:  4.6dB (Typ) @ 200MHz
  • Two Different Amplifiers on a Common Substrate
  • Independently Accessible Input and Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Emitter Voltage (Each Transistor), VCEO     15V
Collector-Base Voltage (Each Transistor), VCBO     20V
Collector-Substrate Voltage (Each Transistor, Note 1), VCIO     20V
Emitter-Base Voltage (Each Transistor), VEBO     5V
Collector Current (Each Transistor), IC     50mA
Power Dissipation, PD      
            Any One Transistor     300mW
            Total Package     600mW
                  Derate Above 55°C     5mW/°C
Operating Temperature Range, Topr     -55°C to +125°C
Storage Temperature Range, Tstg     -65°C to +200°C

Note 1.The collector of each transistor is isolated from the substrate by an integral diode. The substrate (Pin9) must be connected to the most negative point in the external circuit to maintain isolation betwen transistors and to provide for normal transistor action.

Electrical Characteristics: (TA = +25°C, VCC = ±12V, Note 1 unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Units
Static Characteristics (For Each Differential Amplifier)
Input Offset Voltage VIO   - 0.25 - mV
Input Offset Current IIO I3 = I9 = 2mA - 0.3 - µA
Input Bias Current IIB   - 13.5 33 µA
Temperature Coefficient Magnitude of Input-Offset Voltage     - 1.1 - µV / °C
Static Characteristics (For Each Transistor)
DC Forward Base-Emitter Voltage VBE VCE = 6V, IC = 1mA - 774 - mV
Temperature Coefficient of Base-Emitter Voltage   VCE = 6V, IC = 1mA - -0.9 - mV / °C
Collector Cutoff Current ICBO VCB = 10V, IE = 0 - 0.0013 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V
Collector-Substrate Breakdown Voltage V(BR)CIO IC = 10µA, IB = 0, IE = 0 20 60 - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 - V
Dynamic Characteristics (For Single Transistor)
1/f Noise Figure NF IC = 1mA, f = 100kHz, RS = 500 Ohms - 1.5 - dB
Gain-Bandwidth Product fT VCE = 6V, IC = 5mA - 1.38 - GHz
Collector-Base Capacitance CCB VCB = 5V, IC = 0 Note 2 - 0.28 - pF
Note 3 - 0.28 - pF
Collector-Substrate Capacitance CCI VCI = 5V, IC = 0 - 1.65 - GHz
Dynamic Characteristics (For Each Differential Amplifier)
Common-Mode Rejection Ratio CMRR I3 = I9 = 2mA - 100 - dB
AGC Range, One Stage AGC Bias Voltage = -6V - 100 - dB
Voltage Gain, Single-Ended Output A Bias Voltage = -4.2V, f = 10MHz - 22 - dB
Insertion Power Gain GP VCC = 12V, f = 200MHz

For Cascode Configuration:  I3 = I9 = 2mA

For Diff. Amp Configuration:  I3 = I9 = 4mA (Each Collector IC = 2mA)

Cascode - 23 - dB
Noise Figure NF Cascode - 4.6 - dB
Input Admittance Y11 Cascode - 1.5+j2.45 - mmho
Diff. Amp - 0.878+j1.3 - mmho
Reverse Transfer Admittance Y12 Cascode - 0-j0.008 - mmho
Diff. Amp - 0-j0.013 - mmho
Forward Transfer Admittance Y21 Cascode - 17.9-j30.7 - mmho
Diff. Amp - -10.5+j13 - mmho
Output Admittance Y22 Cascode - -0.503-j15 - mmho
Diff. Amp - 0.071+j0.62 - mmho
Note 2.Pin1 & Pin12 or Pin6 & Pin7
Note 3.Pin10 & Pin11 or Pin4 & Pin5



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